KTD1304 [BL Galaxy Electrical]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | KTD1304 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
FEATURES
Pb
Lead-free
z
z
z
High emitter-base voltage.
High reverse hFE.
Low on resistance.
APPLICATIONS
z
Audio muting application.
SOT-23
ORDERING INFORMATION
Type No.
KTD1304
Marking
MAX
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
20
V
12
V
Collector Current -Continuous
Base Current
300
30
mA
mA
mW
℃
IB
Collector Power Dissipation
Junction and Storage Temperature
PC
200
-55~150
Tj,Tstg
Document number: BL/SSSTC113
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=100μA,IE=0
25
V
V
V
V(BR)CEO
V(BR)EBO
IC=1mA,IB=0
20
12
IE=100μA,IC=0
ICBO
VCB=25V,IE=0
VEB=12V,IC=0
0.1
μA
μA
Emitter cut-off current
IEBO
0.1
DC current gain
hFE
VCE=2V,IC=4mA
200
800
0.25
Collector-emitter saturation voltage
IC=100mA, IB=10mA
VCE(sat)
V
V
Base-emitter saturation voltage
IC=100mA, IB=10mA
VBE(sat)
1
Transition frequency
VCE=10V, IC= 1mA
fT
60
MHz
pF
Collector output capacitance
VCB=10V,IE=0,f=1MHz
Cob
10
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC113
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
B
K
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
H
J
G
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
Document number: BL/SSSTC113
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
KTD1304
3000/Tape&Reel
Document number: BL/SSSTC113
Rev.A
www.galaxycn.com
4
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